A Lecture by Zhou Shengqiang on "Defect Induced Magnetism in SiC"
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A Lecture by Zhou Shengqiang on "Defect Induced Magnetism in SiC"
DateandTime: 2016-01-22 09:00:32

Speaker: Zhou Shengqiang, Research Fellow of Helmholtz-Zentrum Dresden-Rossendorf, Germany
Date: January 22, 2016
Time: 9:00 a.m.
Location: Ion Beam Lecture Hall, Central Campus
Sponsor: the School of Physics

Abstract: 

Defect-induced magnetism is attracting intensive research interest. It not only challenges the traditional opinions about magnetism, but also has some potential applications in spin-electronics. SiC is a new candidate for the investigation of defect-induced ferromagnetism after graphitic materials and oxides due to its high material purity and crystalline quality [1, 2]. In this contribution, we made a comprehensive investigation on the structural and magnetic properties of ion implanted and neutron irradiated SiC sample. In combination with X-ray absorption spectroscopy and first-principles calculations, we try to understand the mechanism in a microscopic picture.  
 
Bio
Zhou Shengqiang, Research Fellow of Helmholtz-Zentrum Dresden-Rossendorf. He has 1 M.Ph., 1 Diploma and 2 Ph.D. graduated, as well as 4 Ph.D. ongoing, with 150 referred papers of more than 2400 citations, H-index 26, 7 invited conference talks and 4 invited articles/chapters.

 
For more information, please visit:
http://www.phym.sdu.edu.cn/2016/0113/4266.html 



Edited by: Liu Huan




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