Speaker: Zhou Shengqiang, Research Fellow of Helmholtz-Zentrum Dresden-Rossendorf, Germany
Defect-induced magnetism is attracting intensive research interest. It not only challenges the traditional opinions about magnetism, but also has some potential applications in spin-electronics. SiC is a new candidate for the investigation of defect-induced ferromagnetism after graphitic materials and oxides due to its high material purity and crystalline quality [1, 2]. In this contribution, we made a comprehensive investigation on the structural and magnetic properties of ion implanted and neutron irradiated SiC sample. In combination with X-ray absorption spectroscopy and first-principles calculations, we try to understand the mechanism in a microscopic picture.
Edited by: Liu Huan