Speaker: Dr. Ming Zhao, obtained B.E. degree in thermophysics from Tsinghua University Beijing, China, in 1999, M.E and Ph.D. degrees in material physics both from Linköping University, Linköping, Sweden, in 2003 and 2008, respectively. Right after his Ph.D. study, he joined imec, Belgium, in 2008, as a researcher. His work at imec focused on III-N MOVPE on various substrates up to 200mm in size for power electronic and RF electronic devices. He has been the principal scientist and the technical lead of the GaN Epi team at imec until 2022 when he left imec and joined Nexperia as the technical director in GaN Epitaxy, responsible for all GaN epitaxy related activities and managing the GaN Epi team at Nexperia. Dr. Zhao has extensive collaboration with 20+ major companies in the GaN industry and 10+ universities and research institutes worldwide. During his imec time, he has done many pioneering works in GaN epitaxial technology on 40V-1200V GaN power devices, GaN IC and advanced GaN-on-Si RF devices. He also played a key role in 5 technology transfers on 200mm emode GaN-on-Si power technology and contributed significantly to 4 large-scale EU projects. He has 120+ publications in scientific journals and conferences and 20+ granted and 6 pending patents.

Date: November 22, 2024

Time: 9:00 am

Location: The First Conference Room, Semiconductor R&D Building, Shandong University

Sponsor: Institute of Novel Semiconductors, Shandong University

Abstract:

Gallium nitride (GaN) devices have emerged as a superior alternative to mature technologies like Si, boasting higher efficiency, power density, and cost-effectiveness for various applications. Among the GaN landscape, there are three main technologies Depletion mode (D-mode), Enhancement mode (E-mode), and vertical GaN, although the latest one not yet broadly commercially available. D-mode devices function as normally-on switches, therefore used in combination with cascode or direct drive configurations. D-mode cascode devices offer higher gate threshold voltage, lower 3rd quadrant losses or lower gate leakage current. E-mode HEMTs, based ora p-GaN layer on the gate (normally-off), offer advantages like enhanced efficiency at low voltages (<300V), simpler manufacturing, and improved slew rate control. This presentation will delve into the strengths and weaknesses of each technology, while also examining their respective target segments, applications, and market sizes.

For more information, please visit:

https://www.view.sdu.edu.cn/info/1020/197143.htm